IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P1
MBN900D45A
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>30,000cycles)
∗ Isolated head sink (terminal to base).
CIRCUIT DIAGRAM
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN900D45A
Collector Emitter Voltage V
CES
V 4,500
Gate Emitter Voltage V
GES
V ±20
DC I
C
900
Collector Current 1ms I
Cp
A 1,800
DC I
F
900
Forward Current 1ms I
FM
A 1,800
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
6,000(AC 1 minute)
Terminals
(M4/M8)
- 2/10 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit Min.
Typ.
Max.
Test Conditions
- - 18 V
CE
=4,500V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 50 100
V
CE
=4,500V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V - 5.5 tbd I
C
=900A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 4.5 6.0 7.5 V
CE
=10V, I
C
=900mA, Tj=25
o
C
Input Capacitance C
ies
nF - 130
- V
CE
=10V,V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge Ω - 1.5 - V
CE
=10V,V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 1.6 2.5 V
CC
=2,600V, Ic=900A
Turn On Time
t
on
- 2.2 3.0 L=100nH
Fall Time t
f
- 1.9 3.0 R
G
=2.2Ω (3)
Switching Times
Turn Off Time t
off
µs
- 3.6 5.5 V
GE
=±15V, Tj=125
o
C
Peak Forward Voltage Drop V
FM
V - 4.2 5.0 IF=900A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.6 1.0 Vcc=2,600V, IF=900A, L=100nH
Tj=125
o
C
Turn On Loss E
on(10%)
J/P - 2.2 3.0
Turn Off Loss E
off(10%)
J/P - 2.0 2.5
Reverse Recovery Loss E
rr(10%)
J/P - 1.1 1.5
V
CC
=2,600V, Ic=900A, L=100nH
R
G
=2.2
Ω
(3)
V
GE
=±15V, Tj=125
o
C
Stray inductance module L
SCE
nH - 13 -
IGBT Rth(j-c)
- - 0.008
Thermal Impedance
FWD Rth(j-c)
K/W - - 0.016
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W - 0.006
- Case to fin
Notes:(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
OUTLINE DRAWING
Unit in mm
Weight: 1200(g)
E E E
E
G
C
C
C
C
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P2
MBN900D45A
Fig.2 Definition of Ls
Fig.1 Switching test circuit
Fig.3 Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
( )
Vcc
Ls
L
LOAD
Rg
G/D
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P3
MBN900D45A
0
300
600
900
1200
1500
1800
0 2 4 6 8 10
Collector to Emitter Voltage, VCE(V)
Collector Curent , Ic (A)
V
GE
=15V
13V
TYPICAL
9V
7V
5V
Tc=25
℃
℃℃
℃
Collector Current vs.Collector to Emitter Voltage
11V
0
300
600
900
1200
1500
1800
0 2 4 6 8 10
Collector to Emitter Voltage, VCE(V)
Collector Curent , Ic (A)
VGE
=15V
TYPICAL
9V
7V
5V
Tc=125
℃
℃℃
℃
Collector Current vs.Collector to Emitter Voltage
13V
11V
0
300
600
900
1200
1500
1800
0 1 2 3 4 5 6 7
Forward Voltage, VF(V)
Forward Curent , IF (A)
Forward Voltage of free-wheeling diode
TYPICAL
VGE=0V
Tc=25
℃
℃℃
℃
Tc=125
℃
℃℃
℃
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P4
MBN900D45A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 500 1000
Collector Curent , Ic (A)
Eon(Full)
Eon(10%)
Turn-on Loss vs.Collector Current
TYPICAL
【
【 【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、R
G
=2.2Ω
V
D
=2600V、L≒100nH、Tc=125℃
Inductive load
t4t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
Turn-on Loss , Eon (J/pulse)
0.0
0.5
1.0
1.5
2.0
2.5
0 500 1000
Collector Curent , Ic (A)
Eoff(Full)
Eoff(10%)
Turn-off Loss vs.Collector Current
TYPICAL
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、R
G
=2.2Ω
V
D
=2600V、L≒100nH、
Tc=125℃
Inductive load
t5
90%
90%
Vge
Vc e
Ic
10%
10%
toff
tf
t8t7
t0
t0
t6
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
Turn-off Loss , Eoff (J/pulse)
0.0
0.5
1.0
1.5
2.0
2.5
0 500 1000
Forward Current , IF (A)
Err(Full)
Err(10%)
TYPICAL
Recovery Loss vs.Forward Current
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、R
G
=2.2Ω
V
D
=2600V、L≒100nH、Tc=125℃
Inductive load
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Reverse Recovery Loss , Err (J/pulse)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 500 1000
Collector Current , Ic (A)
Switching time vs. Collector current
TYPICAL
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、R
G
=2.2Ω
V
D
=2600V、L≒100nH、Tc=125℃
Inductive load
Switching time , ton , tr , toff , tf , trr (us)
trr
toff
tf
ton
tr
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P5
MBN900D45A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Eon(10%)
Eon(full)
TYPICAL
Turn-on Loss vs. Gate Resistance
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、Ic=900A
V
D
=2600V、L≒100nH、
Tc=125℃
Inductive load
t4t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
Turn-on Loss , Eon (J/pulse)
0.0
1.0
2.0
3.0
4.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Eoff(10%)
Eoff(full)
TYPICAL
Turn-off Loss vs. Gate Resistance
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、Ic=900A
V
D
=2600V、L≒100nH、Tc=125℃
Inductive load
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8t7
t0
t0
t6
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
Turn-off Loss , Eoff (J/pulse)
0.0
1.0
2.0
3.0
4.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Recovery Loss vs. Gate Resistance
TYPICAL
【
【【
【Condition
ConditionCondition
Condition】
】】
】
V
GE
=±15V、IF=900A
V
D
=2600V、L≒100nH、Tc=125℃
Inductive load
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Reverse Recovery Loss , Err (J/pulse)
Err(10%)
Err(full)
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P6
MBN900D45A
-15
-10
-5
0
5
10
15
-8 -6 -4 -2 0 2 4 6 8
QG（μC)
VGE (V)
Qg-VGE curve
TYPICAL
【
【【
【Condition
ConditionCondition
Condition】
】】
】
Vcc＝2250V
Ic=900A
Tc=25℃
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P7
MBN900D45A
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time : t(s)
Transient Thermal Impedance Curve
IGBT
IGBTIGBT
IGBT
FWD
FWDFWD
FWD
Maximum
Transient thermal impedance : Zth(j-c) (K/W)
Negative environmental impact material
Please note the following negative environmental impact materials are contained
in the product in order to keep product characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
http://store.iiic.cc/
IGBT MODULE
Spec.No.IGBT-SP-02008 R4
P8
MBN900D45A
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/
Notices
NoticesNotices
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
http://store.iiic.cc/
