IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 V RDS(on) 33 m ID 47 A P-TO263-3-2 P-TO220-3-1 * Green package (lead free) Type Package Ordering Code Marking IPP47N10S-33 PG-TO220-3-1 SP0002-25706 N1033 IPB47N10S-33 PG-TO263-3-2 SP0002-25702 N1033 IPI47N10S-33 PG-TO262-3-1 SP0002-25703 N1033 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25C 47 TC=100C 33 ID puls 188 EAS 400 Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 175 W -55... +175 C Pulsed drain current TC=25C Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 mJ kV/s IS =47A, VDS =0V, di/dt=200A/s TC=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.85 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current A IDSS VDS =100V, VGS =0V, Tj =25C - 0.1 1 VDS =100V, VGS =0V, Tj =150C - - 100 IGSS - 10 100 nA RDS(on) - 25 33 m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =33A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 13 26 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =33A Input capacitance Ciss VGS =0V, VDS =25V, - 2000 2500 Output capacitance Coss f=1MHz - 370 465 Reverse transfer capacitance Crss - 190 240 Turn-on delay time td(on) - 25 39 Rise time tr - 23 36 Turn-off delay time td(off) - 63 99 Fall time tf - 15 22.5 - 19 28.5 - 29 43.5 - 70 105 V(plateau) VDD =80V, ID=47A - 6.03 - V IS - - 47 A - - 188 VDD =50V, VGS=10V, ID =47A, RG =4.7 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =47A VDD =80V, ID =47A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =94A - 1.1 1.5 V Reverse recovery time trr VR =50V, IF =lS , - 100 150 ns Reverse recovery charge Qrr diF /dt=100A/s - 400 600 nC Page 3 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 190 parameter: VGS 10 V SPP47N10 55 W A 160 45 140 40 120 35 ID Ptot SPP47N10 30 100 25 80 20 60 15 40 10 20 0 0 5 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 C parameter : D = tp /T 10 10 1 3 SPP47N10 SPP47N10 K/W A 10 0 tp = 7.1s Z thJC 10 s 10 -1 DS /I D ID 10 2 =V DS (on ) 10 -2 0.20 0.10 R 10 1 D = 0.50 100 s 0.05 1 ms 0.02 10 -3 0.01 10 ms single pulse DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS A SPP47N10 100 Ptot = 175W 100 k j i 90 b 4.5 h c 5.0 d 5.5 e 6.0 f 6.5 g 7.5 ID 80 g 70 f 60 50 e 40 d 30 h 8.0 i 9.0 j 9.0 k 10.0 l 20.0 vgs[V] 60 5V 5.5V 6V 6.5V 7V 7.5V 50 8V 80 70 40 9V 30 20 10V 20V c 20 10 0 0 m VGS [V] a 4.0 l RDS(on) 120 b a 1 2 3 4 5 V 6 10 0 8 20 40 60 110 A ID 80 VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s gfs = f(ID ); Tj=25C parameter: gfs 35 60 A S 50 45 25 g fs ID 40 35 20 30 15 25 20 10 15 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 0 10 20 30 40 A 60 ID VGS Page 5 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 33 A, VGS = 10 V parameter: VGS = VDS , ID = 2 mA 130 SPP47N10 5 V 110 4.4 100 4 V GS(th) RDS(on) m 90 80 3.6 3.2 70 2.8 60 2.4 2 50 98% 40 30 1.2 typ 0.8 10 0.4 -20 20 typ 1.6 20 0 -60 max 60 100 140 C min 0 -60 200 -20 20 60 100 140 Tj V 200 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 s 10 4 10 3 SPP47N10 A pF 10 2 C IF Ciss 10 3 10 1 Tj = 25 C typ Coss Tj = 175 C typ Tj = 25 C (98%) Crss 10 2 0 5 10 15 20 25 30 V Tj = 175 C (98%) 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 47 A , VDD = 25 V, RGS = 25 parameter: ID = 47 A pulsed 650 mJ 16 SPP47N10 V 550 12 450 VGS EAS 500 400 0,2 VDS max 10 0,8 VDS max 350 8 300 250 6 200 4 150 100 2 50 0 20 40 60 80 100 120 140 C 180 Tj 0 0 20 40 60 80 nC 110 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP47N10 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C 200 Tj Page 7 http://store.iiic.cc/ 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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