BC328-25ZL1 - ON Semiconductor L.L.C.

2–91Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol BC327 BC328 Unit

Collector–Emitter Voltage VCEO –45 –25 Vdc

Collector–Base Voltage VCBO –50 –30 Vdc

Emitter–Base Voltage VEBO –5.0 Vdc

Collector Current — Continuous IC–800 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 Watt

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

JA 200 °C/W

Thermal Resistance, Junction to Case R

JC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –10 mA, IB = 0) BC327

BC328

V(BR)CEO –45

–25 —

——

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = –100 µA, IE = 0) BC327

BC328

V(BR)CES –50

–30 —

——

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10

A, IC = 0) V(BR)EBO –5.0 — — Vdc

Collector Cutoff Current

(VCB = –30 V, IE = 0) BC327

(VCB = –20 V, IE = 0) BC328

ICBO —

——

—–100

–100

nAdc

Collector Cutoff Current

(VCE = –45 V, VBE = 0) BC327

(VCE = –25 V, VBE = 0) BC328

ICES —

——

—–100

–100

nAdc

Emitter Cutoff Current

(VEB = –4.0 V, IC = 0) IEBO — — –100 nAdc

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC327,-16,-25

BC328,-16,-25

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

123

COLLECTOR

BASE

EMITTER

BC327,-16,-25 BC328,-16,-25

2–92 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –100 mA, VCE = –1.0 V) BC327/BC328

BC327–16/BC328–16

BC327–25/BC328–25

(IC = –300 mA, VCE = –1.0 V)

hFE 100

100

160

—

630

250

400

—

Base–Emitter On Voltage

(IC = –300 mA, VCE = –1.0 V) VBE(on) — — –1.2 Vdc

Collector–Emitter Saturation V oltage

(IC = –500 mA, IB = –50 mA) VCE(sat) — — –0.7 Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = –10 V, IE = 0, f = 1.0 MHz) Cob —11 — pF

Current–Gain — Bandwidth Product

(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) fT— 260 — MHz

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

θJC(t) = (t) θJC

θJC = 100°C/W MAX

θJA(t) = r(t) θJA

θJA = 375°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

t1t2

P(pk)

DUTY CYCLE, D = t1/t2

SINGLE PULSE

–1

000

–10 –100–1.0 –3.0 –10 –30

VCE, COLLECTOR–EMITTER VOLTAGE

Figure 2. Active Region — Safe Operating Area

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

COLLECTOR

RRENT

hFE, DC CURRENT GAIN

–100

000

10 –1000–0.1 –10 –100

100

–1.0

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

1.0 ms1.0 s TJ = 135°C

100 µs

VCE = –1.0 V

TA = 25°C

TC = 25°C

(APPLIES BELOW RATED VCEO)

BC327,-16,-25 BC328,-16,-25

2–93Motorola Small–Signal Transistors, FETs and Diodes Device Data

IB, BASE CURRENT (mA)

Figure 4. Saturation Region

IC, COLLECTOR CURRENT (mA)

Figure 5. “On” Voltages

100

1.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients

+1.0

IC, COLLECTOR CURRENT

Figure 7. Capacitances

–0.1 –1.0–1.0 –10 –100 –1000

–2.0

–1.0

VCE

COLLECTOR–EMITTER

OLTA

OLTS)

V, VOLTAGE (VOLTS)

TEMPERAT

COE

ICIENTS

(mV

/C)

°θ

C, CAPACITANCE (pF)

–1

–0.8

–0.6

–0.4

–0.2

–0.01 –0.1 –10 –100–1.0

–1

–0.8

–0.6

–0.4

–0.2

–1.0 –10 –1000–100

–10 –100

TJ = 25°C

IC = –10 mA

IC = –100 mA

IC = –300 mA

IC =

–500 mA

TA = 25°CVBE(sat) @ IC/IB = 10

VBE(on) @ VCE = –1.0 V

VCE(sat) @ IC/IB = 10

θVC for VCE(sat)

θVB for VBE Cob

Cib

2–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

EMBOSSED TAPE AND REEL

SOT-23, SC-59, SC-70/SOT-323, SC–90/SOT–416, SOT-223 and SO-16 packages are available only in

Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59,

SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information).

SOT-23: available in 8 mm Tape and Reel

Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.

Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.

SC-59: available in 8 mm Tape and Reel

Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.

Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.

SC-70/ available in 8 mm Tape and Reel

SOT-323: Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.

Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.

SOT-223: available in 12 mm Tape and Reel

Use the device title (which already includes the “T1” suffix) to order the 7 inch/1000 unit reel.

Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/4000 unit reel.

SO-16: available in 16 mm Tape and Reel

Add an “R1” suffix to the device title to order the 7 inch/500 unit reel.

Add an “R2” suffix to the device title to order the 13 inch/2500 unit reel.

RADIAL TAPE IN FAN FOLD BOX OR REEL

TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels.

Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in

printed circuit boards.

TO-92: available in Fan Fold Box

Add an “RLR” suffix and the appropriate Style code* to the device title to order the Fan Fold box.

available in 365 mm Radial Tape Reel

Add an “RLR” suffix and the appropriate Style code* to the device title to order the Radial Tape

Reel.

*Refer to Section 6 on Packaging for Style code characters and additional information on ordering

*requirements.

DEVICE MARKINGS/DATE CODE CHARACTERS

SOT-23, SC-59, SC-70/SOT-323, and the SC–90/SOT–416 packages have a device marking and a date

code etched on the device. The generic example below depicts both the device marking and a representa-

tion of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.

ABCD

The “D” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the

part was manufactured.

Tape and Reel Specifications

6–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Tape and Reel Specifications

and Packaging Specifications

Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure

cavity for the product when sealed with the “peel–back” cover tape.

•Two Reel Sizes Available (7″ and 13″)

•Used for Automatic Pick and Place Feed Systems

•Minimizes Product Handling

•EIA 481, –1, –2

•SOD–123, SC–59, SC–70/SOT–323, SC–70ML/SOT–363,

SOT–23, TSOP–6, in 8 mm Tape

•SOT–223 in 12 mm Tape

•SO–14, SO–16 in 16 mm Tape

Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual

reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is

one full reel for each line item, and orders are required to be in increments of the single reel quantity.

OF FEED

DIRECTION

SC–59, SC–70/SOT–323, SOT–23

8 mm8 mm

12 mm

SOT–223

SOD–123

16 mm

SO–14, 16

SC–70ML/SOT–363, TSOP–6

T1 ORIENTATION

8 mm

SC–70ML/SOT–363

T2 ORIENTATION

8 mm

EMBOSSED TAPE AND REEL ORDERING INFORMATION

Package Tape Width

(mm) Pitch

mm (inch) Reel Size

mm (inch)

Devices Per Reel

and Minimum

Order Quantity Device

Suffix

SC–59 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

SC–70/SOT–323 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

8 330 (13) 10,000 T3

SO–14 16 8.0 ± 0.1 (.315 ± .004) 178 (7) 500 R1

16 330 (13) 2,500 R2

SO–16 16 8.0 ± 0.1 (.315 ± .004) 178 (7) 500 R1

16 330 (13) 2,500 R2

SOD–123 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

8 330 (13) 10,000 T3

SOT–23 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

8 330 (13) 10,000 T3

SOT–223 12 8.0 ± 0.1 (.315 ± .004) 178 (7) 1,000 T1

12 330 (13) 4,000 T3

SC–70ML/SOT–363 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

8 178 (7) 3,000 T2

TSOP–6 8 4.0 ± 0.1 (.157 ± .004) 178 (7) 3,000 T1

6–3

Tape and Reel SpecificationsMotorola Small–Signal Transistors, FETs and Diodes Device Data

EMBOSSED TAPE AND REEL DATA FOR DISCRETES

CARRIER TAPE SPECIFICATIONS

B1K0

Top Cover

Tape

Embossment

User Direction of Feed

Center Lines

of Cavity

DP2

10 Pitches Cumulative Tolerance on Tape

± 0.2 mm

(± 0.008″)

For Components

2.0 mm x 1.2 mm and Larger

* Top Cover Tape

Thickness (t1)

0.10 mm

(.004″) Max.

Embossment

Embossed Carrier

R Min

Bending Radius

Maximum Component Rotation

T ypical Component

Cavity Center Line

T ypical Component

Center Line

100 mm

(3.937″)

250 mm

(9.843″)

1 mm

(.039″) Max

1 mm Max

10°

Tape and Components

Shall Pass Around Radius “R”

Without Damage

Tape

For Machine Reference Only

Including Draft and RADII

Concentric Around B0

Camber (Top View)

Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm

See

Note 1

Bar Code Label

DIMENSIONS

Tape

Size B1 Max D D1E F K P0P2R Min T Max W Max

8mm 4.55 mm

(.179″)

1mm

–0.0

( 0 9+ 004

1.0 Min

(.039″)

5±

1mm

(.069±.004″)3.5±0.05 mm

(.138±.002″)2.4 mm Max

(.094″)

1mm

(.157±.004″)

1mm

(.079±.002″)25 mm

(.98″)

6mm

(.024″)8.3 mm

(.327″)

12 mm 8.2 mm

(.323″)

(

004

″

–0.0)

(.060″)5.5±0.05 mm

(.217±.002″)6.4 mm Max

(.252″)

30 mm

(1.18″)12±.30 mm

(.470±.012″)

16 mm 12.1 mm

(.476″)7.5±0.10 mm

(.295±.004″)7.9 mm Max

(.311″)16.3 mm

(.642″)

24 mm 20.1 mm

(.791″)11.5±0.1 mm

(.453±.004″)11.9 mm Max

(.468″)24.3 mm

(.957″)

Metric dimensions govern — English are in parentheses for reference only.

NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,

NOTE 1: the component cannot rotate more than 10° within the determined cavity.

NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.

NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.12–3.

Tape and Reel Specifications

6–4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

EMBOSSED TAPE AND REEL DATA FOR DISCRETES

Full Radius

T Max

20.2 mm Min

(.795″)

1.5 mm Min

(.06″)13.0 mm ± 0.5 mm

(.512″ ± .002″)

50 mm Min

(1.969″)

Outside Dimension

Measured at Edge

Inside Dimension

Measured Near Hub

Size A Max GT Max

8 mm 330 mm

(12.992″)8.4 mm + 1.5 mm, –0.0

(.33″ + .059″, –0.00) 14.4 mm

(.56″)

12 mm 330 mm

(12.992″)12.4 mm + 2.0 mm, –0.0

(.49″ + .079″, –0.00) 18.4 mm

(.72″)

16 mm 360 mm

(14.173″)16.4 mm + 2.0 mm, –0.0

(.646″ + .078″, –0.00) 22.4 mm

(.882″)

24 mm 360 mm

(14.173″)24.4 mm + 2.0 mm, –0.0

(.961″ + .070″, –0.00) 30.4 mm

(1.197″)

Reel Dimensions

Metric Dimensions Govern — English are in parentheses for reference only

6–5

Packaging SpecificationsMotorola Small–Signal Transistors, FETs and Diodes Device Data

TO–92 EIA, IEC, EIAJ

Radial Tape in Fan Fold

Box or On Reel

Radial tape in fan fold box or on reel of the reliable TO–92 package are

the best methods of capturing devices for automatic insertion in printed

circuit boards. These methods of taping are compatible with various

equipment for active and passive component insertion.

•Available in Fan Fold Box

•Available on 365 mm Reels

•Accommodates All Standard Inserters

•Allows Flexible Circuit Board Layout

•2.5 mm Pin Spacing for Soldering

•EIA–468, IEC 286–2, EIAJ RC1008B

Ordering Notes:

When ordering radial tape in fan fold box or on reel, specify the style per

Figures 3 through 8. Add the suffix “RLR” and “Style” to the device title, i.e.

MPS3904RLRA. This will be a standard MPS3904 radial taped and

supplied on a reel per Figure 9.

Fan Fold Box Information — Order in increments of 2000.

Reel Information — Order in increments of 2000.

US/European Suffix Conversions

US EUROPE

RLRA RL

RLRE RL1

RLRM ZL1

TO–92

RADIAL

TAPE IN

FAN FOLD

BOX OR

ON REEL

Packaging Specifications

6–6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A

F1 F2

P2 P2

P1 P

H2B H2B

H4 H5

Figure 1. Device Positioning on Tape

Specification

Inches Millimeter

Symbol Item Min Max Min Max

DTape Feedhole Diameter 0.1496 0.1653 3.8 4.2

D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51

F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8

HBottom of Component to Seating Plane .059 .156 1.5 4.0

H1 Feedhole Location 0.3346 0.3741 8.5 9.5

H2A Deflection Left or Right 0 0.039 0 1.0

H2B Deflection Front or Rear 0 0.051 0 1.0

H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5

H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5

LDefective Unit Clipped Dimension 0.3346 0.433 8.5 11

L1 Lead Wire Enclosure 0.09842 — 2.5 —

PFeedhole Pitch 0.4921 0.5079 12.5 12.9

P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75

P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95

TAdhesive Tape Thickness 0.06 0.08 0.15 0.20

T1 Overall Taped Package Thickness — 0.0567 — 1.44

T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65

WCarrier Strip Width 0.6889 0.7481 17.5 19

W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3

W2 Adhesive Tape Position .0059 0.01968 .15 0.5

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7.

4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

6–7

Packaging SpecificationsMotorola Small–Signal Transistors, FETs and Diodes Device Data

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

ÇÇÇÇÇÇÇ

ADHESIVE TAPE ON

TOP SIDE

FLAT SIDE

CARRIER

STRIP

FLAT SIDE OF TRANSISTOR

AND ADHESIVE TAPE VISIBLE.

ADHESIVE TAPE ON

TOP SIDE

ROUNDED SIDE CARRIER

STRIP

ROUNDED SIDE OF TRANSIST OR AND

ADHESIVE TAPE VISIBLE.

252 mm

9.92”

58 mm

2.28”

MAX

13”

MAX

330 mm

Style M fan fold box is equivalent to styles E and F of

reel pack dependent on feed orientation from box. Style P fan fold box is equivalent to styles A and B of

reel pack dependent on feed orientation from box.

100 GRAM

PULL FORCE 16 mm

HOLDING

FIXTURE HOLDING

FIXTURE

HOLDING

FIXTURE

16 mm

70 GRAM

PULL FORCE

500 GRAM PULL FORCE

The component shall not pull free with a 300 gram

load applied to the leads for 3 ± 1 second. The component shall not pull free with a 70 gram

load applied to the leads for 3 ±1 second.

There shall be no deviation in the leads and

no component leads shall be pulled free of

the tape with a 500 gram load applied to the

component body for 3 ± 1 second.

Figure 2. Style M Figure 3. Style P Figure 4. Fan Fold Box Dimensions

Figure 5. Test #1 Figure 6. Test #2 Figure 7. Test #3

ADHESION PULL TESTS

FAN FOLD BOX STYLES

Packaging Specifications

6–8 Motorola Small–Signal Transistors, FETs and Diodes Device Data

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

REEL STYLES

ARBOR HOLE DIA.

30.5mm ± 0.25mm

MARKING NOTE

RECESS DEPTH

9.5mm MIN

48 mm

MAX

CORE DIA.

82mm ± 1mm

HUB RECESS

76.2mm ± 1mm

365mm + 3, – 0mm

38.1mm ± 1mm

Material used must not cause deterioration of components or degrade lead solderability

CARRIER STRIP

ADHESIVE T APE

ROUNDED

SIDE

FEED

Rounded side of transistor and adhesive tape visible.

ADHESIVE TAPE ON REVERSE SIDE

CARRIER STRIP FLAT SIDE

FEED

Flat side of transistor and carrier strip visible

(adhesive tape on reverse side).

CARRIER STRIP

ADHESIVE T APE FLAT SIDE

FEED

Flat side of transistor and adhesive tape visible. Rounded side of transistor and carrier strip visible

(adhesive tape on reverse side).

FEED

ADHESIVE TAPE ON REVERSE SIDE

CARRIER STRIP ROUNDED

SIDE

Figure 8. Reel Specifications

Figure 9. Style A Figure 10. Style B

Figure 11. Style E Figure 12. Style F

Surface Mount Information

7–10 Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING SURFACE MOUNT PACKAGES

RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to ensure proper solder connection inter-

face between the board and the package. With the correct

pad geometry, the packages will self align when subjected to

a solder reflow process.

POWER DISSIPATION FOR A SURFACE MOUNT DEVICE

The power dissipation for a surface mount device is a func-

tion of the drain/collector pad size. These can vary from the

minimum pad size for soldering to a pad size given for

maximum power dissipation. Power dissipation for a surface

mount device is determined by TJ(max), the maximum rated

junction temperature of the die, RθJA, the thermal resistance

from the device junction to ambient, and the operating

temperature, TA. Using the values provided on the data

sheet, PD can be calculated as follows:

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T A of 25°C, one can

calculate the power dissipation of the device. For example,

for a SOT–223 device, PD is calculated as follows.

PD = 150°C – 25°C

156°C/W = 800 milliwatts

The 156°C/W for the SOT–223 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 800 milliwatts. There

are other alternatives to achieving higher power dissipation

from the surface mount packages. One is to increase the

area of the drain/collector pad. By increasing the area of the

drain/collector pad, the power dissipation can be increased.

Although the power dissipation can almost be doubled with

this method, area is taken up on the printed circuit board

which can defeat the purpose of using surface mount

technology. For example, a graph of R θJA versus drain pad

area is shown in Figure 1.

Another alternative would be to use a ceramic substrate or

an aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

TO AMBIENT ( C/W)°

JA,

THERMAL

TANCE

NCTI

0.8 W atts

1.25 Watts* 1.5 Watts

A, AREA (SQUARE INCHES)

0.0 0.2 0.4 0.6 0.8 1.0

160

140

120

100

Board Material = 0.0625″

G–10/FR–4, 2 oz Copper TA = 25°C

*Mounted on the DPAK footprint

Figure 1. Thermal Resistance versus Drain Pad

Area for the SOT–223 Package (Typical)

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads.

Solder stencils are used to screen the optimum amount.

These stencils are typically 0.008 inches thick and may be

made of brass or stainless steel. For packages such as the

SOT–23, SC–59, SC–70/SOT–323, SC–90/SOT–416,

SOD–123, SOT–223, SOT–363, SO–14, SO–16, and

TSOP–6 packages, the stencil opening should be the same

as the pad size or a 1:1 registration.

7–11

Surface Mount InformationMotorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to mini-

mize the thermal stress to which the devices are subjected.

•Always preheat the device.

•The delta temperature between the preheat and soldering

should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference should be a maximum of 10°C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.

Gradual cooling should be used since the use of forced

cooling will increase the temperature gradient and will

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control

settings that will give the desired heat pattern. The operator

must set temperatures for several heating zones and a figure

for belt speed. Taken together, these control settings make

up a heating “profile” for that particular circuit board. On

machines controlled by a computer, the computer remem-

bers these profiles from one operating session to the next.

Figure 2 shows a typical heating profile for use when

soldering a surface mount device to a printed circuit board.

This profile will vary among soldering systems, but it is a

good starting point. Factors that can affect the profile include

the type of soldering system in use, density and types of

components on the board, type of solder used, and the type

of board or substrate material being used. This profile shows

temperature versus time. The line on the graph shows the

actual temperature that might be experienced on the surface

of a test board at or near a central solder joint. The two

profiles are based on a high density and a low density board.

The Vitronics SMD310 convection/infrared reflow soldering

system was used to generate this profile. The type of solder

used was 62/36/2 Tin Lead Silver with a melting point

between 177–189°C. When this type of furnace is used for

solder reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1

“RAMP”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CUR VE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C170°C

140°C

Figure 2. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

Surface Mount Information

7–12 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Footprints for Soldering

0.094

2.4

SC–59

inches

0.037

0.95

0.037

0.95

0.039

1.0

0.031

0.8

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SO–14, SO–16

inches

0.060

1.52

0.275

7.0

0.024

0.6 0.050

1.270

0.155

4.0

SOT–223

0.079

2.0

0.15

3.8

0.248

6.3

0.079

2.0

0.059

1.5 0.059

1.5

0.091

2.3

0.091

2.3

inches

0.035

0.9

0.075

0.7

1.9

0.028

0.65

0.025

0.65

0.025

SC–70/SOT–323

ÉÉÉ

1.4

0.5 min. (3x)

0.5

SOT 416/SC–90

7–13

Surface Mount InformationMotorola Small–Signal Transistors, FETs and Diodes Device Data

SOT–363

(SC–70 6 LEAD)

ÉÉÉ

0.5 mm (min)

0.4 mm (min)

0.65 mm 0.65 mm

1.9 mm

SOD–123

ÉÉÉÉ

ÉÉÉ

inches

0.91

0.036

1.22

0.048

2.36

0.093

4.19

0.165

inches

0.028

0.7

0.074

1.9

0.037

0.95

0.037

0.95

0.094

2.4

0.039

1.0

TSOP–6

Package Outline Dimensions

8–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Package Outline Dimensions

Dimensions are in inches unless otherwise noted.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SECTION X–X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.022 0.41 0.55

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 ––– 12.70 –––

L0.250 ––– 6.35 –––

N0.080 0.105 2.04 2.66

P––– 0.100 ––– 2.54

R0.115 ––– 2.93 –––

V0.135 ––– 3.43 –––

CASE 029–04

(TO–226AA) TO–92

PLASTIC

STYLE 21:

PIN 1. COLLECTOR

2. EMITTER

3. BASE

STYLE 22:

PIN 1. SOURCE

2. GATE

3. DRAIN

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

STYLE 30:

PIN 1. DRAIN

2. GATE

3. SOURCE

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 2:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 5:

PIN 1. DRAIN

2. SOURCE

3. GATE

STYLE 7:

PIN 1. SOURCE

2. DRAIN

3. GATE

STYLE 15:

PIN 1. ANODE 1

2. CATHODE

3. ANODE 2

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSIONS D AND J APPLY BETWEEN L AND K

MIMIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

SECTION X–X

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.44 5.21

B0.290 0.310 7.37 7.87

C0.125 0.165 3.18 4.19

D0.018 0.022 0.46 0.56

F0.016 0.019 0.41 0.48

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.018 0.024 0.46 0.61

K0.500 ––– 12.70 –––

L0.250 ––– 6.35 –––

N0.080 0.105 2.04 2.66

P––– 0.100 ––– 2.54

R0.135 ––– 3.43 –––

V0.135 ––– 3.43 –––

CASE 029–05

(TO–226AE) TO–92

1–WATT PLASTIC

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

STYLE 22:

PIN 1. SOURCE

2. GATE

3. DRAIN

8–3

Package Outline DimensionsMotorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

NOTES:

1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B

AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE

INCLUDED WITHIN THIS CYLINDER, BUT SHALL

NOT BE SUBJECT TO THE MIN LIMIT OF DIA B.

2. LEAD DIA NOT CONTROLLED IN ZONES F, TO

ALLOW FOR FLASH, LEAD FINISH BUILDUP,

AND MINOR IRREGULARITIES OTHER THAN

HEAT SLUGS.

CASE 51–02

(DO–204AA)

DO–7

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A5.84 7.62 0.230 0.300

B2.16 2.72 0.085 0.107

D0.46 0.56 0.018 0.022

F––– 1.27 ––– 0.050

K25.40 38.10 1.000 1.500

All JEDEC dimensions and notes apply.

ÉÉ

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND ZONE R IS

UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSIONS D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIM K MINIMUM.

CASE 182–02

PLASTIC

(T0–226AC) TO–92

SEATING

PLANE

SECTION X–X

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.21

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.49

D0.016 0.022 0.41 0.56

F0.016 0.019 0.407 0.482

G0.050 BSC 1.27 BSC

H0.100 BSC 3.54 BSC

J0.014 0.016 0.36 0.41

K0.500 ––– 12.70 –––

L0.250 ––– 6.35 –––

N0.080 0.105 2.03 2.66

P––– 0.050 ––– 1.27

R0.115 ––– 2.93 –––

V0.135 ––– 3.43 –––

STYLE 1:

PIN 1. ANODE

2. CATHODE

Package Outline Dimensions

8–4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

CASE 318–08

(TO–236AB) SOT–23

12DIM

AMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

STYLE 11:

PIN 1. ANODE

2. CATHODE

3. CATHODE–ANODE

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 18:

PIN 1. NO CONNECTION

2. CATHODE

3. ANODE

STYLE 19:

PIN 1. CATHODE

2. ANODE

3. CATHODE–ANODE

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

PLASTIC

DIM

AMIN MAX MIN MAX

INCHES

2.70 3.10 0.1063 0.1220

MILLIMETERS

B1.30 1.70 0.0512 0.0669

C1.00 1.30 0.0394 0.0511

D0.35 0.50 0.0138 0.0196

G1.70 2.10 0.0670 0.0826

H0.013 0.100 0.0005 0.0040

J0.09 0.18 0.0034 0.0070

K0.20 0.60 0.0079 0.0236

L1.25 1.65 0.0493 0.0649

S2.50 3.00 0.0985 0.1181

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

CASE 318D–04

SC–59

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 2:

PIN 1. N.C.

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. N.C.

2. CATHODE

3. ANODE

STYLE 5:

PIN 1. CATHODE

2. CATHODE

3. ANODE

8–5

Package Outline DimensionsMotorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

123

0.08 (0003) C

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

NOTES:

3. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

4. CONTROLLING DIMENSION: INCH.

____

CASE 318E–04

SOT–223

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 2:

PIN 1. ANODE

2. CATHODE

3. NC

4. CATHODE

CASE 318G–02

TSOP–6

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

456

0.05 (0.002)

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A0.1142 0.12202.90 3.10

B0.0512 0.06691.30 1.70

C0.0354 0.04330.90 1.10

D0.0098 0.01970.25 0.50

G0.0335 0.04130.85 1.05

H0.0005 0.00400.013 0.100

J0.0040 0.01020.10 0.26

K0.0079 0.02360.20 0.60

L0.0493 0.06101.25 1.55

M0 10 0 10

S0.0985 0.11812.50 3.00

____

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

PLASTIC

Package Outline Dimensions

8–6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

CASE 419–02

SC–70/SOT–323

CRN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.071 0.087 1.80 2.20

B0.045 0.053 1.15 1.35

C0.035 0.049 0.90 1.25

D0.012 0.016 0.30 0.40

G0.047 0.055 1.20 1.40

H0.000 0.004 0.00 0.10

J0.004 0.010 0.10 0.25

K0.017 REF 0.425 REF

L0.026 BSC 0.650 BSC

N0.028 REF 0.700 REF

R0.031 0.039 0.80 1.00

S0.079 0.087 2.00 2.20

V0.012 0.016 0.30 0.40

0.05 (0.002)

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 2:

PIN 1. ANODE

2. N.C.

3. CATHODE

STYLE 5:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 7:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. CATHODE–ANODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. ANODE–CATHODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM

AMIN MAX MIN MAX

MILLIMETERS

1.80 2.200.071 0.087

INCHES

B1.15 1.350.045 0.053

C0.80 1.100.031 0.043

D0.10 0.300.004 0.012

G0.65 BSC0.026 BSC

H––– 0.10–––0.004

J0.10 0.250.004 0.010

K0.10 0.300.004 0.012

N0.20 REF0.008 REF

S2.00 2.200.079 0.087

V0.30 0.400.012 0.016

B0.2 (0.008) MM

123

654

–B–

D6 PL

CASE 419B-01

SOT–363

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

STYLE 6:

PIN 1. ANODE 2

2. N/C

3. CATHODE 1

4. ANODE 1

5. N/C

6. CATHODE 2

8–7

Package Outline DimensionsMotorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. CATHODE

2. ANODE

ÂÂÂ

CASE 425–04

SOD–123

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.055 0.071 1.40 1.80

B0.100 0.112 2.55 2.85

C0.037 0.053 0.95 1.35

D0.020 0.028 0.50 0.70

E0.004 ––– 0.25 –––

H0.000 0.004 0.00 0.10

J––– 0.006 ––– 0.15

K0.140 0.152 3.55 3.85

CASE 463–01

SOT–416/SC–90

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A0.70 0.80 0.028 0.031

B1.40 1.80 0.055 0.071

C0.60 0.90 0.024 0.035

D0.15 0.30 0.006 0.012

G1.00 BSC 0.039 BSC

H––– 0.10 ––– 0.004

J0.10 0.25 0.004 0.010

K1.45 1.75 0.057 0.069

L0.10 0.20 0.004 0.008

S0.50 BSC 0.020 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) B

–A–

–B–

3 PL

0.20 (0.008) A

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

Package Outline Dimensions

8–8 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

NOTES:

1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE

POSITION AT SEATING PLANE AT MAXIMUM

MATERIAL CONDITION.

2. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

3. DIMENSION B DOES NOT INCLUDE MOLD

FLASH.

4. ROUNDED CORNERS OPTIONAL.

14 8

HG D K

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.715 0.770 18.16 19.56

B0.240 0.260 6.10 6.60

C0.145 0.185 3.69 4.69

D0.015 0.021 0.38 0.53

F0.040 0.070 1.02 1.78

G0.100 BSC 2.54 BSC

H0.052 0.095 1.32 2.41

J0.008 0.015 0.20 0.38

K0.115 0.135 2.92 3.43

L0.300 BSC 7.62 BSC

M0 10 0 10

N0.015 0.039 0.39 1.01

____

CASE 646–06

14–PIN DIP

PLASTIC

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

–A–

HGD

16 PL

SEATING

916

PLANE

–T–

0.25 (0.010) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.740 0.770 18.80 19.55

B0.250 0.270 6.35 6.85

C0.145 0.175 3.69 4.44

D0.015 0.021 0.39 0.53

F0.040 0.70 1.02 1.77

G0.100 BSC 2.54 BSC

H0.050 BSC 1.27 BSC

J0.008 0.015 0.21 0.38

K0.110 0.130 2.80 3.30

L0.295 0.305 7.50 7.74

M0 10 0 10

S0.020 0.040 0.51 1.01

____

CASE 648–08

16–PIN DIP

PLASTIC

8–9

Package Outline DimensionsMotorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE OUTLINE DIMENSIONS (continued)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

–A–

–B–

P7 PL

14 8

71 M

0.25 (0.010) B M

0.25 (0.010) A S

–T–

RX 45

SEATING

PLANE D14 PL K

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A8.55 8.75 0.337 0.344

B3.80 4.00 0.150 0.157

C1.35 1.75 0.054 0.068

D0.35 0.49 0.014 0.019

F0.40 1.25 0.016 0.049

G1.27 BSC 0.050 BSC

J0.19 0.25 0.008 0.009

K0.10 0.25 0.004 0.009

M0 7 0 7

P5.80 6.20 0.228 0.244

R0.25 0.50 0.010 0.019

____

CASE 751A–03

SO–14

PLASTIC

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

16 9

SEATING

PLANE

RX 45

8 PLP

–B–

–A–

0.25 (0.010) B S

–T–

16 PL

0.25 (0.010) A S

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A9.80 10.00 0.386 0.393

B3.80 4.00 0.150 0.157

C1.35 1.75 0.054 0.068

D0.35 0.49 0.014 0.019

F0.40 1.25 0.016 0.049

G1.27 BSC 0.050 BSC

J0.19 0.25 0.008 0.009

K0.10 0.25 0.004 0.009

M0 7 0 7

P5.80 6.20 0.229 0.244

R0.25 0.50 0.010 0.019

____

CASE 751B–05

SO–16

PLASTIC

Reliability and Quality Assurance

9–12 Motorola Small–Signal Transistors, FETs and Diodes Device Data

OUTGOING QUALITY

The Average Outgoing Quality (AOQ) refers to the number

of devices per million that are outside the specification limits

at the time of shipment. Motorola has established Six Sigma

goals to improve its outgoing quality and will continue its ”error

free performance” focus to achieve its goal of zero parts per

million (PPM) outgoing quality. Motorola’s present quality level

has lead to vendor certification programs with many of its

customers. These programs ensure a level of quality which

allows the customer either to reduce or eliminate the need for

incoming inspections.

AVERAGE OUTGOING QUALITY (AOQ)

CALCULATION

AOQ = (Process Average)

(Probability of Acceptance)

(106) (PPM)

Process Average = Total Projected Reject Devices

Total Number of Devices

Projected Reject Devices = Defects in Sample

Sample Size

Lot Size

Total Number of Devices = Sum of units in each submitted lot

Probability of Acceptance = 1 ± Number of Lots Rejected

Number of Lots Tested

106 = Conversion to parts per million (PPM)

RELIABILITY DATA ANALYSIS

Reliability is the probability that a semiconductor device will

perform its specified function in a given environment for a

specified period. In other words, reliability is quality over time

and environmental conditions. The most frequently used

reliability measure for semiconductor devices is the failure

rate ( λ ). The failure rate is obtained by dividing the number

of failures observed by the product of the number of devices

on test and the interval in hours, usually expressed as percent

per thousand hours or failures per billion device hours (FITS).

This is called a point estimate because it is obtained from

observations on a portion (sample) of the population of

devices.

To project from the sample to the population in general, one

must establish confidence intervals. The application of

confidence intervals is a statement of how ‘‘confident’’ one is

that the sample failure rate approximates that for the

population. To obtain failure rates at different confidence

levels, it is necessary to make use of specific probability

distributions. The chi–square (χ2) distribution that relates

observed and expected frequencies of an event is frequently

used to establish confidence intervals. The relationship

between failure rate and the chi–square distribution is as

follows:

λ = χ2 (α, d. f.)

where:

λ= failure rate

χ2 = chi–square function

α= (100 – confidence level) / 100

d.f. = degrees of freedom = 2r + 2

r = number of failures

t = device hours

Chi–square values for 60% and 90% confidence intervals for

up to 12 failures are shown in Table 1–1.

Table 1–1 – Chi–Square Table

Chi–Square Distribution Function

60% Confidence Level 90% Confidence Level

No. Fails χ2 Quantity No. Fails χ2 Quantity

1.833

4.045

6.211

8.351

10.473

12.584

14.685

16.780

18.868

20.951

23.031

25.106

27.179

4.605

7.779

10.645

13.362

15.987

18.549

21.064

23.542

25.989

28.412

30.813

33.196

35.563

The failure rate of semiconductor devices is inherently low .

As a result, the industry uses a technique called accelerated

testing to assess the reliability of semiconductors. During

accelerated tests, elevated stresses are used to produce, in

a short period, the same failure mechanisms as would be

observed under normal use conditions. The objective of this

testing is to identify these failure mechanisms and eliminate

them as a cause of failure during the useful life of the product.

Temperature, relative humidity, and voltage are the most

frequently used stresses during accelerated testing. Their

relationship to failure rates has been shown to follow an Eyring

type of equation of the form:

λ = A exp(φkT) • exp(B/RH) • exp(CE)

Where A, B, C, φ, and k are constants, more specifically B,

C, and φ are numbers representing the apparent energy at

which various failure mechanisms occur. These are called

activation energies. ‘‘T’’ is the temperature, ‘‘RH’’ is the

relative humidity , and ‘‘E’’ is the electric field. The most familiar

form of this equation (shown on following page) deals with the

first exponential term that shows an Arrhenius type

relationship of the failure rate versus the junction temperature

of semiconductors. The junction temperature is related to the

ambient temperature through the thermal resistance and

power dissipation. Thus, we can test devices near their

maximum junction temperatures, analyze the failures to

assure that they are the types that are accelerated by

temperature and then by applying known acceleration factors,

estimate the failure rates for lower junction.

The table on the following page shows observed activation

energies with references.

9–13

Reliability and Quality AssuranceMotorola Small–Signal Transistors, FETs and Diodes Device Data

Table 1–2 – T ime Dependent Failure Mechanisms in Semiconductor Devices

(Applicable to Discrete and Integrated Circuits)

Device

Association Process Relevant

Factors Accelerating

Factors

Typical

Activation

Energy in eV Model Reference

Silicon Oxide

Silicon–Silicon

Oxide Interface

Metallization

Bond and Other

Mechanical Interfaces

Various W ater Fab,

Assembly, and

Silicon Defects

Surface Charges

Inversion, Accumulation

Oxide Pinholes

Dielectric Breakdown

(TDDB)

Charge Loss

Electromigration

Corrosion

Chemical

Galvanic

Electrolytic

Intermetallic

Growth

Metal Scratches

Mask Defects, etc.

Silicon Defects

Mobile Ions

E/V, T

E, T

T, J

Grain Size

Doping

Contamination

T, Impurities

Bond Strength

T, V

E, T

J, T

H, E/V, T

T, V

1.0

0.7–1.0 (Bipolar)

1.0 (Bipolar)

0.3–0.4 (MOS)

0.3 (MOS)

0.8 (MOS)

EPROM

1.0 Large grain Al

(glassivated)

0.5

Small grain Al

0.7 Cu–Al/Cu–Si–Al

(sputtered)

0.6–0.7

(for electrolysis)

E/V may have

thresholds

1.0 (Au/Al)

0.5–0.7 eV

0.5 eV

Fitch, et al.

Peck

1984 WRS

Hokari, et al.

Domangue, et al.

Crook, D.L.

Gear, G.

Nanda, et al.

Black, J.R.

L ycoudes, N.E.

Fitch, W.T

Howes, et al.

MMPD

V = voltage; E = electric field; T = temperature; J = current density; H = humidity

NO. REFERENCE

1A 1.0 eV activation for leakage type failures.

Fitch, W .T.; Greer, P.; L ycoudes, N.; ‘‘Data to Support 0.001%/1000

Hours for Plastic I/C’s.’ ’ Case study on linear product shows 0.914 eV

activation energy which is within experimental error of 0.9 to 1.3 eV

activation energies for reversible leakage (inversion) failures reported

in the literature.

1B 0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is

under investigation subsequent to information obtained from 1984

W afer Reliability Symposium, especially for bipolar capacitors with

silicon nitride as dielectric.

2 1.0 eV activation for leakage type failures.

Peck, D.S.; ‘‘New Concerns About Integrated Circuit Reliability’’ 1978

Reliability Physics Symposium.

3 0.36 eV for dielectric breakdown for MOS gate structures.

Domangue, E.; Rivera, R.; Shedard, C.; ‘‘Reliability Prediction Using

Large MOS Capacitors’’, 1984 Reliability Physics Symposium.

4 0.3 eV for dielectric breakdown.

Crook, D.L.; ‘‘Method of Determining Reliability Screens for T ime

Dependent Dielectric Breakdown’ ’, 1979 Reliability Physics

Symposium.

5 1.0 eV for dielectric breakdown.

Hokari, Y.; et al.; IEDM Technical Digest, 1982.

6 1.0 eV for large grain Al–Si (compared to line width).

Nanda, Vangard, Gj–P; Black, J.R.; ‘‘Electromigration of Al–Si Alloy

Films’’, 1978 Reliability Physics Symposium.

7 0.5 eV Al, 0.7 eV Cu–Al small grain (compared to line width).

Black, J.R.; ‘‘Current Limitation of Thin Film Conductor’’ 1982 Reli-

ability Physics Symposium.

8 0.65 eV for corrosion mechanism.

L ycoudes, N.E.; ‘ ‘The Reliability of Plastic Microcircuits in Moist

Environments’’, 1978 Solid State Technology.

9 1.0 eV for open wires or high resistance bonds at the pad bond

due to Au–Al intermetallics.

Fitch, W .T.; ‘‘Operating Life vs Junction Temperatures for Plastic

Encapsulated I/C (1.5 mil Au wire)’’, unpublished report.

10 0.7 eV for assembly related defects.

Howes, M.G.; Morgan, D.V.; ‘‘Reliability and Degradation, Semi-

conductor Devices and CIrcuits’’ John Wiley and Sons, 1981.

11 Gear, G.; ‘‘FAMOUS PROM Reliability Studies’’, 1976 Reliability

Physics Symposium.

12 Black, J.R.: unpublished report.

13 Motorola Memory Products Division; unpublished report.

Reliability and Quality Assurance

9–14 Motorola Small–Signal Transistors, FETs and Diodes Device Data

THERMAL RESISTANCE

Circuit performance and long–term circuit reliabiity are

affected by die temperature. Normally, both are improved by

keeping the junction temperatures low.

Electrical power dissipated in any semiconductor device is

a source of heat. This heat source increases the temperature

of the die about some reference point, normally the ambient

temperature of 25°C in still air. The temperature increase,

then, depends on the amount of power dissipated in the circuit

and on the net thermal resistance between the heat source

and the reference point.

The temperature at the junction depends on the packaging

and mounting system’s ability to remove heat generated in the

circuit from the junction region to the ambient environment.

The basic formula for converting power dissipation to

estimated junction temperature is:

TJ = TA + PD (θJC + θCA) (1)

or TJ = TA + PD (θJA) (2)

where:

TJ= maximum junction temperature

TA= maximum ambient temperature

PD= calculated maximum power dissipation, including

effects of external loads when applicable

θJC = average thermal resistance, junction to case

θCA = average thermal resistance, case to ambient

θJA = average thermal resistance, junction to ambient

This Motorola recommended formula has been approved

by RADC and DESC for calculating a ‘‘practical’’ maximum

operating junction temperature for MIL–M–38510 devices.

Only two terms on the right side of equation (1) can be

varied by the user, the ambient temperature and the device

case–to–ambient thermal resistance, θCA. (To some extent

the device power dissipation can also be controlled, but under

recommended use the supply voltage and loading dictate a

fixed power dissipation.) Both system air flow and the package

mounting technique affect the θCA thermal resistance term.

θJC is essentially independent of air flow and external

mounting method, but is sensitive to package material, die

bonding method, and die area.

For applications where the case is held at essentially a fixed

temperature by mounting on a large or temperature controlled

heat sink, the estimated junction temperature is calculated by:

TJ = TC + PD (θJC) (3)

where TC = maximum case temperature and the other

parameters are as previously defined.

AIR FLOW

Air flow over the packages (due to a decrease in θJC)

reduces the thermal resistance of the package, therefore

permitting a corresponding increase in power dissipation

without exceeding the maximum permissible operating

junction temperature.

For thermal resistance values for specific packages, see

the Motorola Data Book or Design Manual for the appropriate

device family or contact your local Motorola sales office.

ACTIVATION ENERGY

Determination of activation energies is accomplished by

testing randomly selected samples from the same population

at various stress levels and comparing failure rates due to the

same failure mechanism. The activation energy is

represented by the slope of the curve relating to the natural

logarithm of the failure rate to the various stress levels.

In calculating failure rates, the comprehensive method is to

use the specific activation energy for each failure mechanism

applicable to the technology and circuit under consideration.

A common alternative method is to use a single activation

energy value for the ‘‘expected’’ failure mechanism(s) with the

lowest activation energy.

9–15

Reliability and Quality AssuranceMotorola Small–Signal Transistors, FETs and Diodes Device Data

RELIABILITY STRESS TESTS

The following are brief descriptions of the reliability tests

commonly used in the reliability monitoring program. Not all of

the tests listed are performed by each product division. Other

tests may be performed when appropriate.

AUTOCLAVE (aka, PRESSURE COOKER)

Autoclave is an environmental test which measures device

resistance to moisture penetration and the resultant effect of

galvanic corrosion. Autoclave is a highly accelerated and

destructive test.

Typical Test Conditions: TA = 121°C, rh = 100%, p = 1

atmosphere (15 psig), t = 24 to 96 hours

Common Failure Modes: Parametric shifts, high leak-

age and/or catastrophic

Common Failure Mechanisms: Die corrosion or con-

taminants such as foreign material on or within the pack-

age materials. Poor package sealing.

HIGH HUMIDITY HIGH TEMPERATURE

BIAS (H3TB, H3TRB, or THB)

This is an environmental test designed to measure the

moisture resistance of plastic encapsulated devices. A bias is

applied to create an electrolytic cell necessary to accelerate

corrosion of the die metallization. With time, this is a

catastrophically destructive test.

Typical Test Conditions: TA = 85°C to 95°C, rh = 85%

to 95%, Bias = 80% to 100% of Data Book max. rating, t

= 96 to 1750 hours

Common Failure Modes: Parametric shifts, high leak-

age and/or catastrophic

Common Failure Mechanisms: Die corrosion or con-

taminants such as foreign material on or within the pack-

age materials. Poor package sealing.

HIGH TEMPERATURE GATE BIAS (HTGB)

This test is designed to electrically stress the gate oxide under

a bias condition at high temperature.

Typical Test Conditions: TA = 150°C, Bias = 80% of

Data Book max. rating, t = 120 to 1000 hours

Common Failure Modes: Parametric shifts in gate leak-

age and gate threshold voltage

Common Failure Mechanisms: Random oxide defects

and ionic contamination

Military Reference: MIL–STD–750, Method 1042

HIGH TEMPERATURE REVERSE BIAS

(HTRB)

The purpose of this test is to align mobile ions by means of

temperature and voltage stress to form a high–current

leakage path between two or more junctions.

Typical Test Conditions: TA = 85°C to 150°C, Bias =

80% to 100% of Data Book max. rating, t = 120 to 1000

hours

Common Failure Modes: Parametric shifts in leakage

and gain

Common Failure Mechanisms: Ionic contamination on

the surface or under the metallization of the die

Military Reference: MIL–STD–750, Method 1039

HIGH TEMPERATURE STORAGE LIFE

(HTSL)

High temperature storage life testing is performed to

accelerate failure mechanisms which are thermally activated

through the application of extreme temperatures

Typical Test Conditions: TA = 70°C to 200°C, no bias, t

= 24 to 2500 hours

Common Failure Modes: Parametric shifts in leakage

and gain

Common Failure Mechanisms: Bulk die and diffusion

defects

Military Reference: MIL–STD–750, Method 1032

INTERMITTENT OPERATING LIFE (IOL)

The purpose of this test is the same as SSOL in addition to

checking the integrity of both wire and die bonds by means of

thermal stressing

Typical Test Conditions: TA = 25°C, Pd = Data Book

maximum rating, Ton = Toff =

of 50°C to 100°C, t = 42

to 30000 cycles

Common Failure Modes: Parametric shifts and cata-

strophic

Common Failure Mechanisms: Foreign material, crack

and bulk die defects, metallization, wire and die bond

defects

Military Reference: MIL–STD–750, Method 1037

Reliability and Quality Assurance

9–16 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MECHANICAL SHOCK

This test is used to determine the ability of the device to

withstand a sudden change in mechanical stress due to abrupt

changes in motion as seen in handling, transportation, or

actual use.

Typical Test Conditions: Acceleration = 1500 g’s, Orienta-

tion = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5

Common Failure Modes: Open, short, excessive leak-

age, mechanical failure

Common Failure Mechanisms: Die and wire bonds,

cracked die, package defects

Military Reference: MIL–STD–750, Method 2015

MOISTURE RESISTANCE

The purpose of this test is to evaluate the moisture resistance

of components under temperature/humidity conditions typical

of tropical environments.

Typical Test Conditions: TA = –10°C to 65°C, rh = 80%

to 98%, t = 24 hours/cycles, cycle = 10

Common Failure Modes: Parametric shifts in leakage

and mechanical failure

Common Failure Mechanisms: Corrosion or contami-

nants on or within the package materials. Poor package

sealing

Military Reference: MIL–STD–750, Method 1021

SOLDERABILITY

The purpose of this test is to measure the ability of the device

leads/terminals to be soldered after an extended period of

storage (shelf life).

Typical Test Conditions: Steam aging = 8 hours, Flux =

R, Solder = Sn60, Sn63

Common Failure Modes: Pin holes, dewetting, nonwet-

ting

Common Failure Mechanisms: Poor plating, contami-

nated leads

Military Reference: MIL–STD–750, Method 2026

SOLDER HEAT

This test is used to measure the ability of a device to withstand

the temperatures as may be seen in wave soldering

operations. Electrical testing is the endpoint critierion for this

stress.

Typical Test Conditions: Solder Temperature = 260°C, t

= 10 seconds

Common Failure Modes: Parameter shifts, mechanical

failure

Common Failure Mechanisms: Poor package design

Military Reference: MIL–STD–750, Method 2031

STEADY STATE OPERATING LIFE (SSOL)

The purpose of this test is to evaluate the bulk stability of the

die and to generate defects resulting from manufacturing

aberrations that are manifested as time and

stress–dependent failures.

Typical Test Conditions: TA = 25°C, PD = Data Book

maximum rating, t = 16 to 1000 hours

Common Failure Modes: Parametric shifts and cata-

strophic

Common Failure Mechanisms: Foreign material, crack

die, bulk die, metallization, wire and die bond defects

Military Reference: MIL–STD–750, Method 1026

TEMPERATURE CYCLING (AIR TO AIR)

The purpose of this test is to evaluate the ability of the device

to withstand both exposure to extreme temperatures and

transitions between temperature extremes. This testing will

also expose excessive thermal mismatch between materials.

Typical Test Conditions: TA = –65°C to 200°C, cycle =

10 to 4000

Common Failure Modes: Parametric shifts and cata-

strophic

Common Failure Mechanisms: Wire bond, cracked or

lifted die and package failure

Military Reference: MIL–STD–750, Method 1051

THERMAL SHOCK (LIQUID TO LIQUID)

The purpose of this test is to evaluate the ability of the device

to withstand both exposure to extreme temperatures and

sudden transitions between temperature extremes. This

testing will also expose excessive thermal mismatch between

materials.

Typical Test Conditions: TA = 0°C to 100°C, cycle = 20

to 300

Common Failure Modes: Parametric shifts and cata-

strophic

Common Failure Mechanisms: Wire bond, cracked or

lifted die and package failure

Military Reference: MIL–STD–750, Method 1056

VARIABLE FREQUENCY VIBRATION

This test is used to examine the ability of the device to

withstand deterioration due to mechanical resonance.

Typical Test Conditions: Peak acceleration = 20 g’s,

Frequency range = 20 Hz to KHz, t = 48 minutes

Common Failure Modes: Open, short, excessive leak-

age, mechanical failure

Common Failure Mechanisms: Die and wire bonds,

cracked die, package defects

Military Reference: MIL–STD–750, Method 2056

9–17

Reliability and Quality AssuranceMotorola Small–Signal Transistors, FETs and Diodes Device Data

STATISTICAL PROCESS CONTROL

Communication Power & Signal Technologies Group

(CPSTG) is continually pursuing new ways to improve product

quality. Initial design improvement is one method that can be

used to produce a superior product. Equally important to

outgoing product quality is the ability to produce product that

consistently conforms to specification. Process variability is

the basic enemy of semiconductor manufacturing since it

leads to product variability. Used in all phases of Motorola’s

product manufacturing, STATISTICAL PROCESS CONTROL

(SPC) replaces variability with predictability. The traditional

philosophy in the semiconductor industry has been

adherence to the data sheet specification. Using SPC

methods ensures that the product will meet specific process

requirements throughout the manufacturing cycle. The

emphasis is on defect prevention, not detection. Predictability

through SPC methods requires the manufacturing culture to

focus on constant and permanent improvements. Usually,

these improvements cannot be bought with state–of–the–art

equipment or automated factories. With quality in design,

process, and material selection, coupled with manufacturing

predictability, Motorola can produce world class products.

The immediate effect of SPC manufacturing is predictability

through process controls. Product centered and distributed

well within the product specification benefits Motorola with

fewer rejects, improved yields, and lower cost. The direct

benefit to Motorola’s customers includes better incoming

quality levels, less inspection time, and ship–to–stock

capability. Circuit performance is often dependent on the

cumulative effect of component variability. Tightly controlled

component distributions give the customer greater circuit

predictability. Many customers are also converting to

just–in–time (JIT) delivery programs. These programs require

improvements in cycle time and yield predictability achievable

only through SPC techniques. The benefit derived from SPC

helps the manufacturer meet the customer’s expectations of

higher quality and lower cost product.

Ultimately, Motorola will have Six Sigma capability on all

products. This means parametric distributions will be centered

within the specification limits, with a product distribution of plus

or minus Six Sigma about mean. Six Sigma capability , shown

graphically in Figure 1, details the benefit in terms of yield and

outgoing quality levels. This compares a centered distribution

versus a 1.5 sigma worst case distribution shift.

New product development at Motorola requires more robust

design features that make them less sensitive to minor

variations in processing. These features make the

implementation of SPC much easier.

A complete commitment to SPC is present throughout

Motorola. All managers, engineers, production operators,

supervisors, and maintenance personnel have received

multiple training courses on SPC techniques. Manufacturing

has identified 22 wafer processing and 8 assembly steps

considered critical to the processing of semiconductor

products. Processes controlled by SPC methods that have

shown significant improvement are in the diffusion,

photolithography, and metallization areas.

Figure 1. AOQL and Yield from a Normal

Distribution of Product With 6σ Capability

Standard Deviations From Mean

Distribution Centered Distribution Shifted ± 1.5

At ±3σ2700 ppm defective

99.73% yield

At ±4σ63 ppm defective

99.9937% yield

At ±5σ0.57 ppm defective

99.999943% yield

At ±6σ0.002 ppm defective

99.9999998% yield

66810 ppm defective

93.32% yield

6210 ppm defective

99.379% yield

233 ppm defective

99.9767% yield

3.4 ppm defective

99.99966% yield

–6σ–5σ–4σ–3σ–2σ–1σ01σ2σ3σ4σ5σ6σ

To better understand SPC principles, brief explanations

have been provided. These cover process capability,

implementation, and use.

PROCESS CAPABILITY

One goal of SPC is to ensure a process is CAPABLE.

Process capability is the measurement of a process to

produce products consistently to specification requirements.

The purpose of a process capability study is to separate the

inherent RANDOM VARIABILITY from ASSIGNABLE

CAUSES. Once completed, steps are taken to identify and

eliminate the most significant assignable causes. Random

variability is generally present in the system and does not

fluctuate. Sometimes, the random variability is due to basic

limitations associated with the machinery, materials,

personnel skills, or manufacturing methods. Assignable

cause inconsistencies relate to time variations in yield,

performance, or reliability.

Traditionally, assignable causes appear to be random due

to the lack of close examination or analysis. Figure 2 shows

the impact on predictability that assignable cause can have.

Figure 3 shows the difference between process control and

process capability.

A process capability study involves taking periodic samples

from the process under controlled conditions. The

performance characteristics of these samples are charted

against time. In time, assignable causes can be identified and

engineered out. Careful documentation of the process is the

key to accurate diagnosis and successful removal of the

assignable causes. Sometimes, the assignable causes will

remain unclear, requiring prolonged experimentation.

Elements which measure process variation control and

capability are Cp and Cpk, respectively . Cp is the specification

width divided by the process width or Cp = (specification

width) / 6σ. Cpk is the absolute value of the closest

specification value to the mean, minus the mean, divided by

half the process width or Cpk =  closest specification – X/3σ.

Reliability and Quality Assurance

9–18 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. Impact of Assignable Causes

on Process Predictable Figure 3. Difference Between Process

Control and Process Capability

Process “under control” – all assignable causes are

removed and future distribution is predictable.

PREDICTION

TIME

SIZE

TIME

PREDICTION

SIZE

TIME

Out of control

(assignable causes present)

In control assignable

causes eliminated

SIZE

TIME

In control but not capable

(variation from random variability

excessive)

Lower

Specification Limit Upper

Specification Limit

In control and capable

(variation from random

variability reduced)

At Motorola, for critical parameters, the process capability

is acceptable with a Cpk = 1.50 with continual improvement

our goal. The desired process capability is a Cpk = 2 and the

ideal is a Cpk = 5. Cpk, by definition, shows where the current

production process fits with relationship to the specification

limits. Off center distributions or excessive process variability

will result in less than optimum conditions.

SPC IMPLEMENTATION AND USE

CPSTG uses many parameters that show conformance to

specification. Some parameters are sensitive to process

variations while others remain constant for a given product

line. Often, specific parameters are influenced when changes

to other parameters occur. It is both impractical and

unnecessary to monitor all parameters using SPC methods.

Only critical parameters that are sensitive to process

variability are chosen for SPC monitoring. The process steps

affecting these critical parameters must be identified as well.

It is equally important to find a measurement in these process

steps that correlates with product performance. This

measurement is called a critical process parameter.

Once the critical process parameters are selected, a

sample plan must be determined. The samples used for

measurement are organized into RATIONAL SUBGROUPS

of approximately two to five pieces. The subgroup size should

be such that variation among the samples within the subgroup

remain small. All samples must come from the same source

e.g., the same mold press operator, etc. Subgroup data should

be collected at appropriate time intervals to detect variations

in the process. As the process begins to show improved

stability, the interval may be increased. The data collected

must be carefully documented and maintained for later

correlation. Examples of common documentation entries are

operator, machine, time, settings, product type, etc.

Once the plan is established, data collection may begin. The

data collected with generate X and R values that are plotted

with respect to time. X refers to the mean of the values within

a given subgroup, while R is the range or greatest value minus

least value. When approximately 20 or more X and R values

have been generated, the average of these values is

computed as follows:

X = (X + X2 + X3 + . . .)/K

R = (R1 + R2 + R2 + . . .)/K

where K = the number of subgroups measured.

The values of X and R are used to create the process control

chart. Control charts are the primary SPC tool used to signal

a problem. Shown in Figure 4, process control charts show X

and R values with respect to time and concerning reference

to upper and lower control limit values. Control limits are

computed as follows:

R upper control limit = UCLR = D4 R

R lower control limit = LCLR = D3 R

X upper control limit = UCLX = X + A2 R

X lower control limit = LCL X = X – A2 R

9–19

Reliability and Quality AssuranceMotorola Small–Signal Transistors, FETs and Diodes Device Data

147

148

149

150

151

152

153

154

UCL = 152.8

= 150.4

LCL = 148.0

UCL = 7.3

= 3.2

LCL = 0

Figure 4. Example of Process Control Chart Showing Oven Temperature Data

Where D4, D3, and A2 are constants varying by sample size,

with values for sample sizes from 2 to 10 shown in the

following partial table:

n2345678910

D43.27 2.57 2.28 2.11 2.00 1.92 1.86 1.82 1.78

D3* * * * * 0.08 0.14 0.18 0.22

A21.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31

*For sample sizes below 7, the LCLR would technically be a negative number;

in those cases there is no lower control limit; this means that for a subgroup size

6, six ‘‘identical’ ’ measurements would not be unreasonable.

Control charts are used to monitor the variability of critical

process parameters. The R chart shows basic problems with

piece to piece variability related to the process. The X chart can

often identify changes in people, machines, methods, etc. The

source of the variability can be difficult to find and may require

experimental design techniques to identify assignable causes.

Some general rules have been established to help determine

when a process is OUT–OF–CONTROL. Figure 5 shows a

control chart subdivided into zones A, B, and C corresponding

to 3 sigma, 2 sigma, and 1 sigma limits respectively . In Figures

6 through 9 four of the tests that can be used to identify

excessive variability and the presence of assignable causes

are shown. As familiarity with a given process increases, more

subtle tests may be employed successfully.

Once the variability is identified, the cause of the variability

must be determined. Normally, only a few factors have a

significant impact on the total variability of the process. The

importance of correctly identifying these factors is stressed in

the following example. Suppose a process variability depends

on the variance of five factors A, B, C, D, and E. Each has a

variance of 5, 3, 2, 1, and 0.4, respectively.

Since:

σ tot = σ A2 + σ B2 + σ C2 + σ D2 + σ E2

σ tot = 52 + 32 + 22 + 12 +(0.4)2 = 6.3

If only D is identified and eliminated, then:

σ tot = 52 + 32 + 22 + (0.4)2 = 6.2

This results in less than 2% total variability improvement. If

B, C, and D were eliminated, then:

σ tot = 52 + (0.4)2 = 5.02

This gives a considerably better improvement of 23%. If

only A is identified and reduced from 5 to 2, then:

σ tot = 22 + 32 + 22 + 12 + (0.4)2 = 4.3

Identifying and improving the variability from 5 to 2 yields a

total variability improvement of nearly 40%.

Most techniques may be employed to identify the primary

assignable cause(s). Out–of–control conditions may be

correlated to documented process changes. The product may

be analyzed in detail using best versus worst part comparisons

or Product Analysis Lab equipment. Multi–variance analysis

can be used to determine the family of variation (positional,

critical, or temporal). Lastly, experiments may be run to test

theoretical or factorial analysis. Whatever method is used,

assignable causes must be identified and eliminated in the

most expeditious manner possible.

After assignable causes have been eliminated, new control

limits are calculated to provide a more challenging variablility

criteria for the process. As yields and variability improve, it may

become more difficult to detect improvements because they

become much smaller. When all assignable causes have been

eliminated and the points remain within control limits for 25

groups, the process is said to in a state of control.

Reliability and Quality Assurance

9–20 Motorola Small–Signal Transistors, FETs and Diodes Device Data

UCL

LCL

UCL

LCL

CENTERLINE

ZONE A (+ 3 SIGMA)

ZONE B (+ 2 SIGMA)

ZONE C (+ 1 SIGMA)

ZONE C (– 1 SIGMA)

ZONE B (– 2 SIGMA)

ZONE A (– 3 SIGMA)

Figure 5. Control Chart Zones Figure 6. One Point Outside Control Limit

Indicating Excessive Variability

Figure 7. Two Out of Three Points in Zone A or

Beyond Indicating Excessive Variability Figure 8. Four Out of Five Points in Zone B or

Beyond Indicating Excessive Variability

Figure 9. Seven Out of Eight Points in Zone C or

Beyond Indicating Excessive Variability

SUMMARY

Motorola is committed to the use of STATISTICAL

PROCESS CONTROLS. These principles, used throughout

manufacturing have already resulted in many significant

improvements to the processes. Continued dedication to the

SPC culture will allow Motorola to reach the Six Sigma and

zero defect capability goals. SPC will further enhance the

commitment to TOTAL CUSTOMER SATISFACTION.

DEVICE REPLACEMENT DEVICE REPLACEMENTDEVICE REPLACEMENT

REPLACEMENT DEVICES

Replacement Devices

10–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

1N5139 MV2101

1N5139A MV2101

1N5140 MMBV2103LT1

1N5140A MMBV2103LT1

1N5141 MMBV2104LT1

1N5141A MMBV2104LT1

1N5142 MMBV2105LT1

1N5142A MMBV2105LT1

1N5143 MMBV2105LT1

1N5143A MMBV2105LT1

1N5144 MMBV2107LT1

1N5144A MMBV2107LT1

1N5145 MMBV2108LT1

1N5145A MMBV2108LT1

1N5146 MMBV2109LT1

1N5146A MV2109

1N5147 MV2111

1N5147A MV2111

1N5441A MV2101

1N5443A MV2103

1N5444A MV2104

1N5445A MV2105

1N5449A MV2108

1N5450A MV2109

1N5451A MV2111

1N5452A MV2111

1N5453A MV2111

1N5455A MV2115

2N697 MPSA20

2N718A MPSA05

2N720A MPSA06

2N930 MPSA18

2N930A MPSA18

2N956 MPSA05

2N1613 2N4410

2N1711 MPSA05

2N1893 MPSA06

2N2102 2N4410

2N2218A MPS2222A

2N2219 MPS2222A

2N2219A MPS2222A

2N2222 MPS2222

2N2222A MPS2222A

2N2270 MPSA05

2N2369 MPS2369

2N2369A MPS2369A

2N2484 2N5087

2N2895 MPSA06

2N2896 2N5551

2N2904 MPS2907

2N2904A MPS2907A

2N2905 MPS2907

2N2905A MPS2907A

2N2906 MPS2907

2N2906A MPS2907A

2N2907 MPS2907

2N2907A MPS2907A

2N3019 MPSA06

2N3020 MPSA06

2N3053 MPSA20

2N3053A MPSA05

2N3244 2N4403

2N3250 2N4403

2N3251 MPS2907A

2N3251A MPS2907A

2N3467 MPSA56

2N3468 MPSA56

2N3497 2N5401

2N3500 2N5551

2N3501 2N5551

2N3546 MPSH17

2N3634 2N5401

2N3635 2N5401

2N3636 MPSA92

2N3637 MPSA92

2N3700 MPSA06

2N3799 MPSA18

2N3947 MPS2222A

2N3963 MPSA18

2N3964 MPSA18

2N4014 MPS2222A

2N4032 MPS2907A

2N4033 MPSA56

2N4036 MPSA56

2N4037 MPSA56

2N4126 MPS4126

2N4265 2N4264

2N4405 MPS8599

2N4407 MPS8599

2N4931 MPSA92

2N5086 2N5087

2N5668 2N3819

2N5669 2N3819

2N5670 2N3819

2N6431 MPSA42

2N6433 MPSA92

2N6516 2N6517

BA582T1 MMBV3401LT1

BC107 BC237

BC107A BC237

BC107B BC237

BC108

BC109C BC3338

BC140–10 MPSW06

BC140–16 MPSW06

BC141–10 MPSW06

BC141–16 MPSW06

BC160–16 MPSW56

BC161–16 MPSW56

BC177 BC547

BC177A BC547A

BC177B BC547B

BC238 BC238B

BC309B BC308C

BC393 MPSA92

BC394 MPSA42

BC450 MPSA92

BC450A MPSA92

BC546A BC546B

BC559 BC559B

BC560B BC560C

BC849ALT1 BC848ALT1

BC850ALT1 BC848ALT1

BC857CLT1 BC857ALT1

BCY70 MPS2222A

BCY71 MPS2222A

BCY72 MPS2222A

BDB01D BDB01C

BDB02D BDB02C

BDC02D BDC01D

BDC05 MPSW42

BF244A 2N3819

BF244B 2N3819

BF245 BF245A

BF245A BF245A

BF245B BF245A

BF245C BF245A

BF246A BF245A

BF246B BF245A

BF247B BF245A

BF256B BF256A

BF256C BF256A

BF258 BF422

BF374 BC338

BF391 MPSA42

BF392 MPSA42

BF492 MPSA92

BF493 MPSA92

BFW43 2N5401

BSP20AT1 BF720T1

BSS71 MPSA42

BSS72 MPSA42

BSS73 MPSA42

BSS74 MPSA92

BSS75 MPSA92

BSS76 MPSA92

BSS89 BS107

BSV16–10 MPS2907A

BSX20 MPS2369A

CV12253 MPSA06

IRFD110 BSS123LT1

IRFD113 MMBF170LT1

IRFD120 BSS123LT1

IRFD123 MMBF170LT1

IRFD210 MMFT107T1

IRFD213 MMFT107T1

IRFD220 MMFT107T1

IRFD223 MMFT107T1

IRFD9120 BSS123LT1

IRFD9123 2N7002LT1

J111 J111RLRA

J113 J113RL1

J203 2N5458

J300 2N5486

J305 MMBF5484LT1

MAD130P BAS16LT1

MAD1103P BAS16LT1

MAD1107P BAS16LT1

MAD1108P BAS16LT1

MAD1109P BAS16LT1

DEVICE REPLACEMENT DEVICE REPLACEMENTDEVICE REPLACEMENT

REPLACEMENT DEVICES

10–3

Replacement DevicesMotorola Small–Signal Transistors, FETs and Diodes Device Data

MM3001 2N5551

MM3725 MPS2222A

MM4001 2N5401

MMAD1106 BAS16LT1

MMBF4856LT1 MMBF4391LT1

MMBF4860LT1 MMBF5457LT1

MMBF5459LT1 MMBF5457LT1

MMBF5486LT1 2N5486

MMBT8599LT1 MMBT5551LT1

MMBV2104LT1 MMBV2103LT1

MMPQ3799 MMPQ3725

MMSV3401T1 MMBV3401LT1

MPF970 MMBFJ175LT1

MPF971 MMBFJ175LT1

MPF3821 MMBF5457LT1

MPF3822 MMBF5457LT1

MPF4856 MPF4391RLRA

MPF4857 2N5639

MPF4858 J112

MPF4859 2N5638RLRA

MPF4860 2N5638RLRA

MPF4861 J112

MPQ6501 MPQ6502

MPS3638 MPS3638A

MPS3866 BF224

MPS4123 MPS4124

MPS4125 MPS4126

MPS4258 MPS3640

MPS5771 MPS3640

MPS6520 MPS6521

MPS6530 MPS6530RLRM

MPS6531 MPS6530RLRM

MPS6562 MPS6651

MPS6568A MPS918

MPS6571 MPSA18

MPS6595 MPS3563

MPS8093 2N4402

MPSA16 MPSA17

MPSH04 MPSH17

MPSH07A MPSH17

MPSH20 MPSH17

MPSH24 MPSH17

MPSH34 MPSH17

MPSH69 MPSH81

MSA1022–BT1 MSA1022–CT1

MSB709–ST1 MSB709–RT1

MSB710–QT1 MSB710–RT1

MSB1218A–ST1 MSB1218A–RT1

MSC1621T1 MSD602–RT1

MSC2404–CT1 MSC2295–CT1

MSD1819A–ST1 MSD1819A–RT1

MV1620 MV2101

MV1624 MMBV2103LT1

MV1636 MV2108

MV1640 MV2109

MV1642 MV2111

MV1644 MV2111

MV2103 MMBV2103LT1

MV2107 MV2108

MV2113 MV2111

MV2114 MV2115

MVAM108 MMBV2109LT1

MVAM109 MMBV2109LT1

MVAM115 MMBV2109LT1

MVAM125 MMBV2109LT1

PBF259 MMBT6517LT1

PBF259S MMBT6517LT1

PBF259RS MMBT6517LT1

PBF493 MMBTA92LT1

PBF493R MMBTA92LT1

PBF493RS MMBTA92LT1

PBF493S MMBTA92LT1

VN1706L MMFT107T1