FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). * -20 V, -2.4 A. RDS(ON) = 0.055 @ VGS = -4.5 V RDS(ON) = 0.080 @ VGS = -2.5 V * Fast switching speed * High performance trench technology for extremely low RDS(ON) Applications * Power management * SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint * Load switch * Battery protection D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings -20 Units VDSS Parameter VGSS Gate-Source Voltage 12 V ID Drain Current (Note 1a) -2.4 -10 A (Note 1a) 0.5 W - Continuous - Pulsed PD Maximum Power Dissipation (Note 1b) TJ, TSTG V 0.46 -55 to +150 C (Note 1a) 250 C/W (Note 1) 75 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 302 FDN302P 7'' 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDN302P Rev C(W) http://store.iiic.cc/ FDN302P October 2000 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units -12 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS ===TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -12 V VDS = 0 V -100 nA On Characteristics -20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) ===TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A, Referenced to 25C 3 VGS = -4.5 V, ID = -2.4 A ID = -2 A VGS = -2.5 V, VGS = -4.5 V, ID = -2.4A, TJ =125C 44 64 58 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -2.4 A 10 S VDS = -10 V, f = 1.0 MHz V GS = 0 V, 882 pF 211 pF 112 pF -0.6 -1.0 -1.5 V mV/C 55 80 84 -10 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -10 V, VGS = -4.5 V, VDS = -10 V, VGS = -4.5 V ID = -1 A, RGEN = 6 ID = -2.4 A, 13 23 ns 11 20 ns 25 40 ns 15 27 ns 9 14 nC 2 nC 3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 (Note 2) -0.7 -0.42 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width =300 s, Duty Cycle =2.0% FDN302P Rev C(W) http://store.iiic.cc/ FDN302P Electrical Characteristics FDN302P Typical Characteristics 3 15 -3.5V -3.0V -2.5V -4.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V -4.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 Figure 1. On-Region Characteristics. 15 0.16 ID = -1.2 A ID = -2.4A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 150 1.5 TJ, JUNCTION TEMPERATURE (oC) 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 12 25oC -IS, REVERSE DRAIN CURRENT (A) TA = 125oC VDS = - 5V 10 -ID, DRAIN CURRENT (A) 9 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) -55oC 8 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 0 3 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN302P Rev C(W) http://store.iiic.cc/ FDN302P Typical Characteristics 1400 VDS = -5V ID = -2.4A f = 1MHz VGS = 0 V 1200 -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1000 CISS 800 600 400 COSS 1 200 0 CRSS 0 0 2 4 6 8 0 10 2 Figure 7. Gate Charge Characteristics. 6 8 10 12 Figure 8. Capacitance Characteristics. 20 P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 1 10s DC VGS =-4.5V SINGLE PULSE RJA = 270oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 270C/W TA = 25C 15 10 5 0 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 270 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN302P Rev C(W) http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 http://store.iiic.cc/