1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
T ypical 2C-WCDM A performance at frequencies of 1476 MHz and 1511 MHz, a supply
voltage of 28 V and an IDq of 1410 mA:
Average output power = 60 W
Power gain = 18.5 dB
Efficiency = 33.0 %
ACPR = −32 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Integrated current sense
BLF6G15L-250PBRN
Power LDMOS transistor
Rev. 2 — 3 November 2010 Product data sheet
Table 1. Typical perf ormance
Ty pical RF performance at Tcase = 25
°
C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR
(MHz) (V) (W) (dB) (%) (dBc)
2C-WCDMA 1476 to 1511 28 60 18.5 33.0 −32[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G15L-250PBRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 3 November 2010 2 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, CDMA and W-CDMA and multi carrier
applications in the 1450 MHz to 1550 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain1
2drain2
3gate1
4gate2
5source [1]
6, 7 sense drain
8, 9 sense gate
61 27
83 49
5
sym12
7
1
2
5
4
3 8, 9
6, 7
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G15L-250PBRN - flanged LDMOST ceramic package; 2 mounting
holes; 8 leads SOT1110A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +11 V
IDdrain current - 64 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase =80°C; PL= 60 W (CW) 0.29 K/W
BLF6G15L-250PBRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 3 November 2010 3 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
6. Characteristics
7. Application information
Table 6. Characteristics
Tj = 25
°
C per section; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 1.8 mA 65 75 - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 180 mA 1.4 1.9 2.4 V
IDq quiescent drain current sense transistor:
IDS= 20.1 mA;
VDS =12V
main transistor:
VDS =28V
1.31 1.41 1.51 A
IDSS drain leakage current VGS =0V; V
DS =28V --2.8μA
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V 25.3 29 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D=9A 8.1 11.3 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=6.3A 0.03 0.1 0.16 Ω
Table 7. RF performance
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f1 = 1473.4 MHz; f2 = 1478.4 MHz; f3 = 1508.4 MHz;
f4= 151 3.4 MHz; RF performance at VDS =28V; I
Dq = 1410 mA; Tcase = 25
°
C; unless otherwise
specified in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 60 - W
Gppower gain PL(AV) = 60 W 16.5 18.5 - dB
RLin input return loss PL(AV) = 60 W 8 12 - dB
ηDdrain efficiency PL(AV) = 60 W 30 33 - %
ACPR adjacent channel power ratio PL(AV) = 60 W - −32 −27 dBc
Table 8. PAR performance
Mode of operation; 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1 ; 64 DPCH; f1 = 1510.9 MHz; RF performance at VDS =28V; I
Dq =1410mA;
Tcase =25
°
C; unless otherwise specified in a class-AB producti on test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average
ratio PL(AV) = 120 W at 0.01 %
probability on CCDF 3.4 4.2 - dB
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Product data sheet Rev. 2 — 3 November 2010 4 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF6G15L-250PBRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq = 1410 mA; PL= 200 W; f = 1475 MHz.
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
Table 9. Phase binning
Off state S11 measurement; VDS = 28 V; VGS = 0 V
Marking cod e Input Resonance Frequency (GHz)
Min Max
11.851.89
21.891.93
31.931.97
Table 10. Gain binning
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1 ; 64 DPCH; f1= 1473.4 MHz, f2= 1478.4 MHz; PL(AV) =60W; V
DS =28V;
IDq = 1410 mA
Marking cod e Gain at a center frequency of 1475.9 MHz in dB
Min Max
BT 17.0 17.5
BU 17.5 18.0
BW 18.0 18.5
BX 18.5 19.0
Table 11. Typical impedance per section
IDq = 950 mA; main transistor VDS = 28 V
f ZS[1] ZL[1]
(MHz) (Ω) (Ω)
1480 1.1 − j2.8 2.3 − j3.2
1510 1.3 − j2.8 2.1 − j2.8
Fig 1. Definition of transistor impeda nc e
001aaf05
9
drain
ZL
ZS
gate
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Product data sheet Rev. 2 — 3 November 2010 5 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
7.3 Graphs
7.3.1 CW
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 2. Power gain and drain efficiency as function of
output power; typical values Fig 3. Input return loss as a function of output
power; typical values
PL (W)
0 250200100 15050
014aab101
18
19
17
20
21
Gp
(dB)
16
30
40
20
50
60
ηD
(%)
10
(1)
(1)
(3)
(2)
(2)
(3)
Gp
ηD
PL (W)
0 250200100 15050
014aab102
10
14
18
RLin
(dB)
6
(1)
(2)
(3)
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Product data sheet Rev. 2 — 3 November 2010 6 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
7.3.2 IS-95
IS-95: PAR = 9.8 dB at 0.01 % probability of the CCDF.
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
IS-95: PAR = 9.8 dB at 0.01 % probability of the CCDF.
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 4. Power gain and drain efficiency as function of
output power; typical values Fig 5. Adjacent channel power ratio and
peak-to-average power ratio as function of
output power; ty pical values
PL (W)
0 16012040 80
014aab099
18
17
19
20
Gp
(dB)
16
30
20
40
50
ηD
(%)
10
(2)
(1)
(3)
(2)
(3)
(1)
Gp
ηD
PL (W)
0 16012040 80
014aab100
−55
−45
−65
−35
−25
ACPR
(dBc) PA R
−75
5
7
3
9
11
1
(3)
(1)
(2)
(3)
(2)
(1)
(1)
(2)
(3)
ACPR1980k
ACPR885k
PAR
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Product data sheet Rev. 2 — 3 November 2010 7 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
7.3.3 2C-WCDMA (5 MHz spacing)
8. Test information
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
3GPP: Test Model 1; 64 DPCH; PAR = 7.5 dB at 0.01 %
probability per carrier; 5 MHz carrier spacing.
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
3GPP: Test Model 1; 64 DPCH; PAR = 7.5 dB at 0.01 %
probability per carrier; 5 MHz carrier spacing.
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
Fig 6. Power gain and drain efficiency as function of
output power; typical values Fig 7. Adjacent channel power ratio and
peak-to-average power ratio as function of
output power; ty pical values
014aab097
PL (W)
0 1208040
19
18
20
21
Gp
(dB)
17
30
20
40
50
ηD
(%)
10
(3)
(2)
(1)
(2)
(3)
(1)
Gp
ηD
PL (W)
0 1208040
014aab098
−20
ACPR
(dBc)
PA R
−55
−50
−45
−40
−35
−30
−25
9
5.5
6
6.5
7
7.5
8.0
8.5
(1)
(3)
(3)
(2)
(2)
(1)
(3) (1)
(2)
ACPR10M
ACPR5M
PAR
Table 12. List of components
See Figure 8 for component layout.
Component Description Value Remarks
C1, C2, C3, C4 multi layer ceramic chip capacitor 100 pF [1]
C5, C6 multi layer ceramic chip capacitor 10 μF[2]
C7 multi layer cerami c chip capacitor 10 nF [2] on input ga te line as shown
C8 multi layer cerami c chip capacitor 100 nF [2]
C10 multi layer ceramic chip capacitor 2.4 pF [1]
C11 multi layer ceramic chip capacitor 3.6 pF [3]
C12 electrolytic capacitor 470 μF; 63 V
C13, C14, C15, C16 multi layer ceramic chip capacitor 33 pF [3]
R1 chip resistor 3.9 kΩPhilips 0603
R2 chip resistor 2.2 kΩPhilips 0603
R3 chip resistor 10 ΩPhilips 0603
R4 chip resistor 0 ΩPhilips 0603
BLF6G15L-250PBRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 3 November 2010 8 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
Printed-Circuit Board (PCB): Taconic RF-35A2; εr = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 μm.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided.
See Table 12 for list of components.
Fig 8. Component layout
NXP
BLF6G15L-250BPRN
Output Rev 03
NXP
BLF6G15L-250BPRN
input Rev 03
+
−
C13
C14
C1
C12
C5
C6
C15
C16
C3
C4
C2
C10 C11
R2 C7
R4
R1
R3
C8
014aab10
4
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Product data sheet Rev. 2 — 3 November 2010 9 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
9. Package outline
Fig 9. Package outline SOT1110A
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1110A 09-11-20
10-02-02
F
langed LDMOST ceramic package; 2 mounting holes; 8 leads SOT1110
A
b
E
E1
Q
c
D
D1
L
A
F
A
U2
H
Aw1B
Dw2
p
B
C
q
H1
U1
e
w3
b1
4
5
3
2
89
61 7
sot1110a_po
Unit(1)
mm
max
nom
min
5.36
3.99
1.14
0.89
0.18
0.10
31.55
30.94
31.52
30.96
9.50
9.30
1.75
1.50
17.12
16.10
3.30
3.05
10.29
10.03
A
Dimensions
bcDD
1EE
1
9.53
9.27
FHH
1
25.53
25.27
pQ
(2)
2.26
2.01
q
35.56
U1
41.28
41.02
U2w1
0.51
inches
max
nom
min
0.211
0.157
0.045
0.035
11.81
11.56
b1
0.465
0.455
0.007
0.004
13.72
e
0.540
1.242
1.218
1.241
1.219
0.374
0.366
0.069
0.059
0.674
0.634
0.13
0.12
0.405
0.395
0.375
0.365
1.005
0.995
L
2.67
2.41
0.105
0.095
0.089
0.079
1.4
1.625
1.615
0.25
0.01 0.02
w2
5.97
5.72
w3
0.25
Zα
0.235
0.225
64°
62°
64°
62°
0.01
0 5 10 mm
scale
Z
α
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF6G15L-250PBRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 3 November 2010 10 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 13. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
DPCH Dedicated Physical CHannel
GSM Global System for Mobile communications
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 14. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G15L-250PBRN v.2 20101103 Product data sheet - BLF6G15L-250PBRN v.1
BLF6G15L-250PBRN v.1 20100914 Preliminary data sheet - -
BLF6G15L-250PBRN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 3 November 2010 11 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
12. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 2 — 3 November 2010 12 of 13
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
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In the event that customer uses the product for design-in and use in
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Quick reference data — The Quick reference data is an extract of the
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
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For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF6G15L-250PBRN
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 November 2010
Document identifier : BLF6 G15 L-250PBRN
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.3.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.3.2 IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.3.3 2C-WCDMA (5 MHz spacing). . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
