Vishay General Semiconductor
RGF1A thru RGF1M
Document Number 88697
26-Jun-06
www.vishay.com
1
Surface Mount Glass Passivated Junction Fast
Switching Rectifier
FEATURES
• Superectifier structure for high reliability
condition
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C, LF max peak
of 250 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Patented*
®
DO-214BA (GF1)
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
VF1.3 V
trr 150 ns, 250 ns, 500 ns
Tj max. 175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Device marking code RA RB RD RG RJ RK RM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at TL = 120 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 30 A
Max. full load reverse current, full cycle
average TA = 55 °C IR(AV) 50 µA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com
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Document Number 88697
26-Jun-06
Vishay General Semiconductor
RGF1A thru RGF1M
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Maximum
instantaneous forward
voltage
at 1.0 A VF 1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 125 °C IR 5.0
100 µA
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 250 500 ns
Typical junction
capacitance at 4.0 V, 1 MHz CJ 8.5 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Typical thermal resistance (1) RθJA
RθJL
80
28 °C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) REFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RGF1J-E3/67A 0.104 67A 1500 7" Diameter Plastic Tape & Reel
RGF1J-E3/5CA 0.104 5CA 6500 13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0.5
100 110 120 130 140 150 160 175
0
1
Lead Temperature (°C)
Average Forward Rectified Current (A)
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
60 Hz
Resistive or
Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
110 100
0
5
10
15
20
25
30
T
j
= T
j
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Document Number 88697
26-Jun-06
www.vishay.com
3
RGF1A thru RGF1M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
020 40 60 80100
0.01
0.1
1
10
T
j
= 125 °C
T
j
= 100 °C
T
j
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118(3.00)
0.040 (1.02)
0.066 (1.68)
0.098(2.49)
0.108(2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 MAX.
(1.93 MAX.)
0.220
(5.58)REF
0.060 MIN.
(1.52 MIN.)
MountingPad Layout
Cathode Band
0.066 MIN.
(1.68 MIN.)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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